Implantation Dose Profiling by MOS C-V Measurements
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چکیده
The failure of the depletion approximation in the near surface region implies that conventional MOS C-V measurements yield erroneous doping profiles in that region. Integrating MOS C-V doping profiles yields only a partial dose excluding the important surface dose portion. Here, we report a new approach, which enables the determination of the entire doping dose, taking into account the crucial surface region. The threshold voltage can be obtained self-consistently. The method is also applicable to MOS structures with ultra thin gate oxides.
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